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229910004207 SiNx Inorganic materials 0.000 claims description 11.238000001312 dry etching Methods 0.000 claims abstract description 6.238000000576 coating method Methods 0.000 claims abstract description 15.239000011248 coating agent Substances 0.000 claims abstract description 15.
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238000000151 deposition Methods 0.000 claims abstract description 20.238000004519 manufacturing process Methods 0.000 title claims abstract description 29.229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 33.229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 120.Assignors: CAPUTO, DOMENICO, DE CESARE, GIAMPIERO, DE IULIIS, SIMONA, GEERLIGS, LAMBERT JOHAN, PIROZZI, LUISA, SALZA, ENRICO, SERENELLI, LUCA, TUCCI, MARIO Status Abandoned legal-status Critical Current Links Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Energieonderzoek Centrum Nederland ECN filed Critical Energieonderzoek Centrum Nederland ECN Priority to US12/128,109 priority Critical patent/US20090293948A1/en Publication of US20090293948A1 publication Critical patent/US20090293948A1/en Assigned to STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND reassignment STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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Original Assignee Energieonderzoek Centrum Nederland ECN Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Nascetti Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Abandoned Application number US12/128,109 Inventor Mario Tucci Simona De Iuliis Lambert Johan Geerlings L.
#PC1D N TYPE BAR PDF#
Google Patents Method of manufacturing an amorphous/crystalline silicon heterojunction solar cellÄownload PDF Info Publication number US20090293948A1 US20090293948A1 US12/128,109 US12810908A US2009293948A1 US 20090293948 A1 US20090293948 A1 US 20090293948A1 US 12810908 A US12810908 A US 12810908A US 2009293948 A1 US2009293948 A1 US 2009293948A1 Authority US United States Prior art keywords layer conductivity type solar cell type doped mask Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US20090293948A1 - Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell US20090293948A1 - Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell